Official Course
Description: MCCCD Approval: 06/22/99 |
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MIT111 19996-99999 |
LEC |
3 Credit(s) |
3 Period(s) |
Semiconductor Manufacturing Technology II |
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Processes of devices and integrated circuit formation. Ion implantation, photolithography, deposition, metalization, wafer test and evaluation, process yields and packaging. Prerequisites: MIT110, or equivalent, or permission of instructor. |
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Go to Competencies Go to Outline
MCCCD Official Course Competencies: |
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MIT111 19996-99999 |
Semiconductor
Manufacturing Technology II |
1. |
Describe the principle of chemical vapor deposition. (I) |
2. |
List the materials deposited by CVD. (I) |
3. |
Describe the difference between various CVD systems. (I) |
4. |
Identify the components of a CVD reactor. (I) |
5. |
Describe the purpose and use of a thin-film fuse. (I, II) |
6. |
List the materials used in metalization of semiconductor devices. (II) |
7. |
Describe the operation of various metalization equipments. (II) |
8. |
List the methods and advantages of microscope and SEM inspection of wafer surfaces. (III) |
9. |
Explain the method used for pinhole counting. (III) |
10. |
List the four functions of a semiconductor package. (IV) |
11. |
List the common parts of a package. (IV) |
12. |
Describe the major packaging process flows. (IV) |
13. |
Explain the basic vacuum terminology and describe why vacuum is used in
the manufacture of semiconductor devices. (V) |
14. |
Determine the fundamental information about
gases that is necessary to understand vacuum device operation. (VI) |
15. |
Describe the various systems of units that
are used to measure pressure and conversions between them. (VII) |
16. |
List the properties of the four states of
matter and describe the transition between them. (VIII) |
17. |
Measure the vapor pressure for different substances at different pressures.
(VIII) |
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Go to Description Go to top of Competencies
MCCCD Official
Course Competencies: |
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MIT111 19996-99999 |
Semiconductor Manufacturing Technology II |
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I. Thin films-deposition A. Film parameters B. Chemical vapor deposition C. Atmospheric pressure systems D. Low-pressure chemical vapor deposition (LPCVD) E. Photochemical (ultraviolet) LPCVD F. Deposited films II. Thin films-metalization A. Metal film uses B. Metal materials C. Deposition methods D. Vacuum pumps III. Wafer test and evaluation A. Resistance and resistivity B. Layer thickness measurements C. Unction depth D. Contamination and defect detection E. Critical dimensions measurement F. Device electrical measurements I. Pinhole counting IV. Packaging A. Packaging operation B. Prepackaging wafer preparation C. Cleanliness and static control D. Package function and design E. Die separation, pick and plate, inspection and attach F. Bonding G. Sealing techniques H. Lead plating and trimming V. Vacuums A. Definition of “vacuum” B. Uses of vacuum in semiconductor manufacturing 1. Wafer handling 2. Cleaning 3. Wafer processing: removal of contaminants and chemical reactants to insure repeatable process pressures VI. Gases A. Composition of the atmosphere B. Residual gas analyzer C. Absolute temperature scale (Kelvin and Celsius) D. Standard temperature and pressure E. Brownian motion 1. Charles Law 2. Boyle Law 3. Dalton Law F. Pressure G. Mean free path VII. Measurement A. Units of measure 1. Torr 2. Pascal 3. mbar 4. mm Hg B. Conversions between pressure units C. Pressure regimes (ranges) 1. Low vacuum 2. Medium vacuum 3. High vacuum 4. Ultra high vacuum D. Pressure differential and net forces VIII. States of matter A. Solid state
B. Liquid state C. Gas state D. Ionic state E. Sublimation, condensation and vaporization F. Vapor pressure |