| 1.
|
Identify the steps required to start material processing. (I)
|
| 2.
|
List the steps involved in the imaging process. (I)
|
| 3.
|
Identify transistor geometries from cross sections. (I)
|
| 4.
|
Describe the process used to design a pattern. (II)
|
| 5.
|
Explain the photoresist properties including adhesion, resolution,
sensitivity, and removal. (III)
|
| 6.
|
Compare and contrast negative and positive photoresist processes.
(III)
|
| 7.
|
List the basic photoresist process steps and describe each step. (IV)
|
| 8.
|
Define the terms resolution and registration, and explain the
importance of each in the fabrication process. (V)
|
| 9.
|
Identify the main types of mask layers. (V)
|
| 10.
|
List the types of process contamination likely to be encountered and
describe the equipment used to detect contamination. (VI)
|
| 11.
|
Describe the cleaning methods used in surface preparation steps. (VI)
|
| 12.
|
Explain the spin method of applying photoresist materials and describe
thickness-measuring techniques. (VII)
|
| 13.
|
Describe the effect of softbake on expose and procedures for
temperature verifications. (VII)
|
| 14.
|
Calculate exposure adjustments to correct improper exposure settings
for negative and positive photoresists. (VIII)
|
| 15.
|
Compare and contrast the in-line and batch developing processes.
(VIII)
|
| 16.
|
Describe an inspection procedure for identifying an improperly printed
pattern. (VIII)
|
| 17.
|
Use specifications to create pass-fail criteria for completed work.
(VIII)
|
| 18.
|
Identify cross sections of isotropic, anisotropic, and re-entrant
types of etch. (IX)
|
| 19.
|
List the advantages and disadvantages of wet and dry etch processes.
(IX)
|
| 20.
|
Describe the effects of temperature on the wet etch process. (IX)
|
| 21.
|
Describe the common resist strip methods. (IX)
|
|