| 1.
|
Describe the construction and basic electrical operation of
semiconductor junctions in diode and transistor applications. (I)
|
| 2.
|
Describe and compare the process flows for HMOS1 and NMOS devices. (I)
|
| 3.
|
Explain the importance of dimensional and performance scaling and the
impact of defects on die yield. (I)
|
| 4.
|
Describe the principal uses of an oxide layer in semiconductor devices
and the major oxidation methods used. (II)
|
| 5.
|
List the physical factors that affect the growth rate of oxide layers
and describe methods for measuring and controlling the oxide thickness
and quality. (II)
|
| 6.
|
List diffusion dopant sources and methods of introduction and describe
crystal lattice defects. (III)
|
| 7.
|
Describe resistivity measurement techniques and the advantages and
disadvantages of each. (III)
|
| 8.
|
Identify the major components of an ion implanter system and describe
the functions of each. (IV)
|
| 9.
|
Compare and contrast low-, medium-, and high-current ion implanters
with respect to dose range, beam current, energy range, through-put,
and scan type. (IV)
|
| 10.
|
List the types of thin-film dielectrics and conductors and describe
the appliction of each type in device physics. (V)
|
| 11.
|
Describe the chemical vapor deposition (CVD) process and its
application to thin-film processing. (V)
|
| 12.
|
List the major steps in the photomasking process. (VI)
|
| 13.
|
Describe the chemistry of positive photoresist processing. (VI)
|
| 14.
|
Explain the wet and dry etching methods and the relative merits of
each. (VII)
|
| 15.
|
Explain the significance of process/device simulation, and describe
simulation techniques and the types of problems they are designed to
resolve. (VIII)
|
| 16.
|
Describe a typical process flow for fabricating an integrated circuit
device. (IX)
|
| 17.
|
List manufacturing indictors of success in device processing. (IX)
|
|