Official Course Description: MCCCD Approval: 07/22/08
GTC133 19936-20086	LEC	3 Credit(s)	3 Period(s)
Introduction to Microelectronics
Overview of microelectronics. Includes definition of common terms, identification of branches of microelectronics, fabrication materials/processes, and inspection/test methods. Prerequisites: None.

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MCCCD Official Course Competencies:
GTC133   19936-20086	Introduction to Microelectronics

1.	Define the terms solid state, planar processing, and N-type and P-type semiconducting materials. (I)
2.	Explain the integration scale and the implications of processing circuits of different levels of integration. (I)
3.	Describe the properties of a doped semiconductor as they relate to N- and P-type semiconducting materials. (II)
4.	Explain the functions of the chemicals used in the semiconductor industry. (II)
5.	Describe the Czochralski and float-zone methods of crystal growing. (III)
6.	Identify the major sources of contamination in the fabrication area and list techniques and strategies used to minimize contamination. (IV)
7.	Draw a flow diagram of the circuit-design process. (V)
8.	Describe the doping, metalization, and passivation sequence of basic operations used in semiconductor fabrication. (V)
9.	Define the terms fabrication yield, wafer sort yield, and assembly yield and given a fabrication yield sheet, calculate the accumulative fabrication yield. (VI)
10.	Describe the principal uses of silicon dioxide layer in semiconductor devices and the major oxidation methods used. (VII)
11.	Describe the basic ten-step photomasking process. (VIII)
12.	Draw a diagram of the develop-inspect-rework loop. (VIII)
13.	Explain the methods and relative merits of wet and dry etching techniques. (VIII)
14.	Draw a flow diagram of a complete diffusion process. (IX)
15.	Compare the advantages and disadvantages of diffusion and ion implant processes. (IX)
16.	Describe atmospheric chemical vapor deposition (CVD) and low-pressure chemical vapor deposition (LPCVD) processes and the relative merits of each. (X)
17.	Explain the differences between epitaxial and polysilicon layers. (X)
18.	Describe the vacuum evaporation and sputtering methods of metalization and the relative merits of each. (XI)
19.	Describe the four-point probe techniques for resistivity testing of wafers. (XII)
20.	List the methods used for layer thickness measurements and explain the principles of operation for each method. (XII)
21.	List the primary advantages of statistical process control over simple averages for monitoring the manufacturing process. (XIII)
22.	Define the terms CIM and CAM and their use in a manufacturing setting. (XIII)
23.	Sketch and label the structural parts of the individual components of an integrated circuit. (XIV)
24.	Describe the major integrated circuit functions. (XV)
25.	List the common parts and functions of a semiconductor package. (XVI)
26.	Describe a typical semiconductor packaging process flow. (XVI)

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MCCCD Official Course Outline:
GTC133   19936-20086	Introduction to Microelectronics

I. The semiconductor industry A. Terminology B. Discrete devices and integrated circuits C. Solid-state, planar processing and N- and P-type semiconducting materials D. Stages of semiconductor processing E. Integration scale and levels of integration F. Processes and devices used in semiconductor processing II. Materials and process chemicals A. Properties of a doped semiconductor B. Composition and function of N- and P-type semiconducting materials C. Resistivity and resistance D. Acid, alkalis, and solvents 1. Functions 2. Other E. Basic chemical - handling rules III. Crystal growth and wafer preparation A. Crystalline and non-crystalline materials B. Wafer crystal orientations C. Czochralski and float-zone methods of crystal growth D. Wafer-preparation process E. Resistivity and doping levels IV. Contamination control A. Effects of contamination on semiconductor devices and processes B. Major sources of contamination C. Clean room strategies and techniques D. Water, chemicals, and gases used in semiconductor fabrication E. Static and static-control methods V. Overview of wafer fabrication A. The four basic wafer operations B. The six parts of a wafer C. Circuit-design process D. Composite drawing and mask set E. Doping, metalization, and passivation sequence of basic operations VI. Process yields A. Terminology B. Major yield measurement points C. Effects of wafer sort yield due to: 1. Wafer diameter 2. Die size 3. Die density 4. Number of edge die 5. Defect density D. Overall process yield calculations E. Major influences on fabrication yield F. Relationship between high process yields and device reliability VII. Oxidation-silicon dioxide layer in semiconductor devices A. Theory B. Oxidation methods 1. Thermal 2. Wet C. Oxidation process steps VIII. Photolithography A. Ten-step photomasking process B. Photoresist chemistry 1. Negative 2. Positive C. Basic photomasking D. Double masking E. Multilayer resist processing F. Planarization techniques G. Loop-diagramming 1. Develop 2. Inspect 3. Rework H. Hard-bake methods I. Etching methods 1. Chemical 2. Plasma 3. Ion beam 4. Reactive ion J. Photoresist stripping methods 1. Chemical 2. Dry IX. Doping A. Diffusion concepts B. Diffusion steps 1. Deposit ion 2. Drive-in C. Deposition sources 1. Gas 2. Liquid 3. Solid D. Ion implantation 1. Equipment 2. Implantation masks X. Deposition A. Chemical vapor deposition (CVD) 1. Process 2. Merits B. CVD systems 1. Atmospheric pressure 2. Low pressure chemical vapor depositon (LPCVD) - process/merits C. Layer depositions 1. Silicon 2. Polysilicon 3. Silicon dioxide 4. Silicon nitride D. Deposition systems - characteristics 1. Epitaxial 2. Polysilicon XI. Metalization A. Metal film applications B. Surface conductors C. Thin-film fuses D. Deposition methods - merits 1. Vacuum evaporation 2. Sputtering E. Vacuum system pumps 1. Rotary oil 2. Oil diffusion 3. Cyrogenic high-vacuum XII. Wafer test and evaluation A. Resistance/resistivity and sheet resistance B. Four-point probe techniques C. Layer thickness measurements/principles of operation 1. Color interference 2. Fringe counting 3. Spectrophotometer 4. Ellipseometer 5. Stylus D. Function depth measurements E. Contamination detection F. Critical dimension measurements G. Device electrical measurements XIII. Manufacturing technology A. Factors that influence fabrication costs B. Statistical process control principles - advantages/averages C. Control charts D. Four levels of automation E. WIP and JIT effects on production costs F. CIM and CAM applications 1. Definitions 2. Uses XIV. Semiconductor devices and integrated circuit formation A. Structual parts of an integrated circuit 1. Individual components 2. Sketch 3. Lable B. Isolation structures used in integrated curcuits C. Metal oxide semiconductor (MOS) construction D. MOS devices 1. MMOS 2. VMOS 3. DMOS 4. HMOS E. Integrated circuit metalization techniques F. Comparison of bipolar and MOS circuits XV. Integrated circuit types A. Major integrated circuit functions B. Analog versus digital integrated curcuits C. Logic gates arrays D. Major memory circuits types E. Volatile and non-volatile memory circuits XVI. Packaging A. Common semiconductor packages 1. Parts 2. Functions 3. Designs B. Semiconductor packaging process flows

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