Official Course Description: MCCCD Approval: 05/26/92
GTC110 19926-99999	LEC	3 Credit(s)	3 Period(s)
Semiconductor Processing Technology I
Basic units of measure and conversion factors, commonly used terminology and elementary physical and chemical principles applicable to semiconductor processing technology. Prerequisites: None.

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MCCCD Official Course Competencies:
GTC110   19926-99999	Semiconductor Processing Technology I

1.	Describe the major steps in the semiconductor assembly process. (I)
2.	Describe the alignment and exposure process including development and inspection. (II)
3.	Describe the purpose and parameters of annealing. (III)
4.	List eight sources of contamination, as well as methods of detection and control. (IV)
5.	Describe the differences between various crystal structures. (V)
6.	Describe the chemical vapor deposition process. (VI)
7.	Contrast Bipolar and MOS transistors. (VII)
8.	List the five steps of diffusion. (VIII)
9.	Describe the process of etching, including wet and dry etching, stripping, and after-cleaning inspection. (IX)
10.	Explain electron bonding between silicon and oxygen. (X)
11.	Contrast transistors, diodes, capacitors and resistors. (XI)
12.	Describe the purposes of the epitaxial layer, the steps of its growth, and characteristics used to evaluate it. (XII)
13.	Explain the purpose, process, and effect of ion implantation. (XIII)
14.	Define regions and functions and their electrical functions. (XIV)
15.	Describe metalization, including its purpose, selection criteria, and deposition methods. (XV)
16.	Identify common uses of oxidation, how it is done, and how it is evaluated. (XVI)
17.	Describe the purpose and process of capacitance-voltage plotting. (XVII)
18.	Explain the process and equipment used in photoresist application. (XVIII)
19.	Describe the purpose and basic steps of photolithography. (XIX)
20.	List two types of photoresists, their performance factors, and guidelines for their storage and handling. (XX)
21.	Identify and write correct symbols and group numbers for elements using a periodic table. (XXI)
22.	Interpret symbols and abbreviations commonly used in wafer fabrication. (XXII)
23.	Compare conductors, insulators, and doped semi-conductors in terms of their valence band, availability of free electrons, width of forbidden zone, and relative energy required to excite. (XXIII)
24.	Explain operation analysis and step analysis of a product produced in the fab. (XXIV)
25.	Describe the purpose and process of resistivity and migration testing. (XXV)

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MCCCD Official Course Outline:
GTC110   19926-99999	Semiconductor Processing Technology I

I. Assembly and Packaging A. Die Separation B. Die and Wire Bonding C. Packaging D. Final Test II. Alignment and Exposure A. Mask Making B. Aligners and Alignment C. Exposure D. E-beam Printing and Other Methods E. Development and After Development Inspection F. Hardbrake III. Annealing A. Definition B. Times and Temperatures C. Short-time annealing IV. Contamination Control A. Eight Sources of Contamination B. Detection and Control V. Crystal Structures A. Crystal vs. Amorphous Materials B. Polycrystalline vs. Single Crystal Arrangements C. Crystal Planes D. Miller Indices E. Crystal Quality F. Wafer Preparation VI. Chemical Vapor Deposition A. Deposition vs. Oxidation B. Two Deposition Approaches C. CVD Equipment D. LVCVD Equipment VII. Bipolar and MOS Transistor A. Bipolar Transistor B. MOS Transistor VIII. Diffusion A. Definition B. Two Type of Diffusion C. Five Steps in Diffusion IX. Etching A. Isotropic ad Anisotropic B. Wet Etching C. Etchant Control D. Rinsing E. Spin Rinse/Drying F. Dry Etching: Three Methods G. Advantages and Disadvantages of Wet and Dry Etching H. Resist Stripping I. After-Cleaning Inspection X. Electron Bonding A. Atomic Structure B. Elements and Components C. Valence D. Bonding E. Silicon Dioxide XI. Electrical Devices A. Diodes B. Capacitors C. Transistors XII. Epitaxial Growth A. Definition B. Growing an epitaxial layer C. Equipment used D. Evaluating the epitaxial layer XIII. Ion Implantation A. Definition B. Masking C. Channeling D. Equipment E. Ion Dose/Profile XIV. Regions and Junctions A. Definition B. Functions XV. Metalization A. Material B. Two Methods: Evaporation and Sputtering C. Equipment D. Step Coverage E. Process Steps XVI. Oxidation A. Common Uses B. Cleaning Before Oxidation C. Types of Oxidation D. Time, Temperature, and Pressure E. Oxidation Equipment F. Oxidation Process Steps G. Oxide Evaluation XVII. Capacitance-Voltage Plotting A. Definition B. Test Wafers C. First Plot D. Second Plot XVIII. Photoresist Application A. Surface Preparation Application B. Application of Photoresist C. Automatic Spinners D. Softbake XIX. Photolithography A. The Challenge B. Photo-mask C. Patterning and Etching D. Ten Basic Steps XX. Photoresists A. Negative Photoresist B. Positive Photoresist C. Polymers D. Solubility E. Performance factors F. Storage and Handling XXI. Periodic Table A. Atomic Structure B. Atomic Number C. Periodic Table XXII. Symbols and Abbreviations A. Temperature Scales B. Metric System C. Significant Numbers D. Exponential Notation E. Scientific Notation XXIII. Conductors, Insulators, Semiconductors A. Valence Band B. Energy Levels C. Conductors D. Insulators E. Semiconductors F. Electron-hole Pairs XXIV. Operation Analysis A. Operation Analysis B. Step Analysis XXV. Resistivity/Migration Testing A. Resistivity B. Migration

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