Official Course Description: MCCCD Approval: 05/26/92
ELE123 19926-99999	LEC LAB	4 Credit(s) 0 Credit(s)	3 Period(s) 3 Period(s)
Solid-State Devices and Circuits
Theory of operation of semiconductor diodes and transistors. Bipolar junction transistor biasing and load-line analysis. AC(Alternating current) equivalent circuits applied to small signal amplifiers. Characteristics of large signal and power amplifiers. Prerequisites: ELE111 or ELE113. ELE112 or ELE114 suggested but not required.

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MCCCD Official Course Competencies:
ELE123   19926-99999	Solid-State Devices and Circuits

1.	Define the following electronic terms: intrinsic semiconductor, n-type material, p-type material, doping, covalent bonding, pentavalentatoms and trivalent atoms. (I)
2.	Describe the operation of both a forward and reverse-biased diode. (II)
3.	Analyze small and large-signal diode circuits. (III, IV)
4.	Describe the functions of the base, emitter and collector of a bipolar transistor, and how they are biased. (V)
5.	Identify and describe the various forms of transistor biasing and how an operating point is selected. (VI)
6.	Solve for all DC voltages, and current in the three basic transistor amplifiers configurations (CE, CB, and CC). (VII, VIII)
7.	Calculate input and output impedances and voltage gain for a given configuration, using the AC model of the three basic transistor amplifier configurations. (VII, VIII)
8.	Explain the concept of the transconductance and its effect on the Field Effect Transistor amplifier gain. (IX)
9.	Describe the operation of common-source, common-drain, and common-gate amplifier and draw schematic diagrams for each. (IX)
10.	Determine the voltage gains and frequency-response characteristics of RC-coupled multistage amplifiers. (X)
11.	Discuss the operation, biasing, advantages, and limitations of class A and B amplifiers. (XI)
12.	Apply the scientific method in inquire and deduction relating the laws, theories and axioms of solid-state devices to specific laboratory experiments. (I-XI)

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MCCCD Official Course Outline:
ELE123   19926-99999	Solid-State Devices and Circuits

I. Introduction A. Semiconductor theory B. Conduction in crystals C. Doping II. Diode theory A. The unbiased diode B. Forward bias C. Reverse bias D. Diode approximations III. Diode circuits A. The half-wave rectifier B. The full-wave rectifier C. The bridge rectifier D. The limiter E. The DC clamper IV. Special-purpose diodes A. Zener diodes B. Optoelectronic devices C. The Scottky diode D. Varactor diodes V. Bipolar transistors A. Basic concepts B. Forward-reverse bias C. The CE connection D. Transistor characteristics E. DC load lines F. The transistor current source VI. Transistor Biasing Circuits A. Base bias B. Emitter-feedback bias C. Collector-feedback bias D. Voltage-divider bias VII. CE amplifiers A. Coupling and bypass capacitors B. Superposition theorem for amplifiers C. AC resistance of the emitter diode D. The AC model of a CE stage E. The swamped stages F. Cascaded stages VIII. CC and CB Amplifiers A. The CC amplifier B. The AC model of an emitter follower C. The common-base amplifier IX. Field effect transistor amplifiers A. Transconductance B. The CS amplifier C. The CD amplifier D. The CG amplifier E. Other applications X. Frequency effects A. Lead and lag networks B. Miller's theroem C. High-frequency BJT analysis D. Decibel power gain E. Bode plots F. Amplifier frequency response XI. Class A and B power amplifier A. The AC load line B. Class A operation C. Class B operation D. Power relationships for class A and class B

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